▎ 摘　　要

NOVELTY - The method involves forming an upper silicon nitride layer on an upper surface of a wafer substrate. A lower silicon oxide layer is formed on a lower surface of the substrate. A metal layer is arranged on the lower silicon acid layer. The upper silicon acid is etched to a predetermined thickness after forming the metal layer. An etching solution is utilized for etching the upper silicon oxynitride layer. A graphene thin film is laminated on the upper silicone oxide layer, and the wafer is etched according to the etched pattern. A pattern is formed by a photolithography process. The metal layer comprises nickel, titanium, chromium, iron, copper, iron and copper. USE - The method is useful for producing pellicle. ADVANTAGE - The yield of the pellicle is increased. The silicon nitride layer can be etched to a thickness of less than 5 nm, so that the reliability is secured. Since the silicon wafer substrate is etched by potassium hydroxide, the patterning can be stably performed. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for manufacturing pellicle(Drawing includes non-English language text).