▎ 摘　　要

NOVELTY - The semiconductor device has a channel layer (10) whose right edge (10a) is bonded with a substrate (17) and that is made of graphene by ether bond or ester bond. A left edge (10b) of channel layer is floated from the substrate, and the center portion of channel layer is spaced apart from substrate. USE - Semiconductor device. ADVANTAGE - The channel layer is combined with substrate by ether bond or ester bond so that the bonding has high strength compared with intermolecular force. Hence the stripping of channel layer from substrate is prevented and the characteristic of graphene used for channel layer of transistor is maintained. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of semiconductor device, involves terminating a surface of substrate by hydroxyl group and terminating a right edge of channel layer made of graphene by hydroxyl group or carboxyl group. The right edge of channel layer is combined with substrate surface by condensing through hydration of right edge and surface of substrate after terminating the right edge by hydroxyl group or carboxyl group. A left edge of channel layer is masked while the right edge is terminated by hydroxyl group or carboxyl group. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the channel layer in the middle of manufacture of semiconductor device. Channel layer (10) Right edge of channel layer (10a) Left edge of channel layer (10b) Gate insulating layer (16) Substrate (17)