• 专利标题:   Photodiode structure comprises substrate, electrode, electron transport layer, P-type semiconductor layer and N-type semiconductor layer in preset composition ratio, photoactive layer having preset thickness, and another electrode.
  • 专利号:   JP2023043171-A, CN115835656-A, US2023129045-A1, TW202315186-A
  • 发明人:   CHANG Y, TSAI K, ZHANG Y
  • 专利权人:   RAYNERGY TEK INC, TIANGUANG MATERIAL TECHNOLOGY CO LTD, RAYNERGY TEK INC
  • 国际专利分类:   H10K030/60, H10K030/20, H10K030/81, H01L051/00, H01L051/42, H01L051/44, H01L051/46
  • 专利详细信息:   JP2023043171-A 28 Mar 2023 H10K-030/60 202332 Pages: 61 Japanese
  • 申请详细信息:   JP2023043171-A JP144457 12 Sep 2022
  • 优先权号:   US244373P, US931744

▎ 摘  要

NOVELTY - A photodiode structure that converts an external light source into a current value comprises a substrate, an electrode (20) arranged on the substrate, an electron transport layer (30) arranged on the electrode (20), a P-type semiconductor layer (41) and an N-type semiconductor layer (43) arranged on the electron transport layer, a photoactive layer having a thickness of 1-15 μ m, and an electrode (50) arranged on the photoactive layer. The P-type semiconductor layer and the N-type semiconductor layer have a composition ratio of 1:0.5 to 1:1.5. USE - Photodiode structure used for converting external light source into current value. Uses included but are not limited to cameras for automotive safety and assistance functions for the driver in vehicle, built-in automation and smart system machine vision, medical applications, human and face recognition, wearable camera, three-dimensional video, and smart mobile phones. ADVANTAGE - The photodetector is capable of achieving self-filtering effect and reducing volume. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the structure of the photodiode. 10Substrate 20,50Electrodes 30Electron transport layer 41P-type semiconductor layer 43N-type semiconductor layer