▎ 摘　　要

NOVELTY - Graphene is manufactured by forming buffer layer (102) made of carbon atomic layer which consists of carbon atom (121), has the same honeycomb structure as graphene, and contains part which is covalently bonded to silicon atom (111) of silicon carbide (SiC) substrate on surface of SiC substrate (101), heating SiC substrate and buffer layer in hydrogen atmosphere, and forming graphene by bonding carbon atom arising from cleavage of covalent bond to silicon atom which arises from cleavage of covalent bond through intercalation and converting buffer layer into graphene by hydrogen. USE - Manufacture of graphene used as channel of electronic device. ADVANTAGE - Concentration of impurity in graphene can be controlled. DETAILED DESCRIPTION - Graphene is manufactured by forming buffer layer (102) made of carbon atomic layer which consists of carbon atom (121), has the same honeycomb structure as graphene, and contains part which is covalently bonded to silicon atom (111) of silicon carbide (SiC) substrate on surface of SiC substrate (101), heating SiC substrate and buffer layer in hydrogen atmosphere, and forming graphene by bonding carbon atom arising from cleavage of covalent bond to silicon atom which is not bonded and arises from cleavage of covalent bond through intercalation and converting buffer layer into graphene by hydrogen. During heat treatment of SiC substrate and buffer layer in hydrogen atmosphere, hydrogen is introduced between buffer layer and SiC substrate and covalent bond of buffer layer and silicon atom of SiC substrate is cleaved. Concentration of interface impurity of graphene is controlled in graphene formation process in which interface impurity concentration of graphene decreases with temperature for heating substrate and buffer layer. DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of the graphene manufacturing method. Substrate (101) Buffer layer (102) Silicon atom (111) Dangling bond (112) Carbon atom (121)