▎ 摘　　要

NOVELTY - The method comprises loading (201) a metal and/or a dielectric on a substrate into a tube furnace and/or a cold wall chamber, introducing (203) hydrogen gas at a rate of 1-100 sccm into the tube furnace and/or the cold wall chamber at a pressure of 10-2 mTorr, heating (204) the metal and/or the dielectric on the substrate at 400-1400 degrees C, and maintaining (205) the temperature (400-1400 degrees C) of the metal and/or the dielectric on the substrate for a duration of time of 0.1-60 minutes while the hydrogen gas is flowed into the tube furnace and/or the cold wall chamber. USE - The method is useful for synthesizing graphene single crystal films, which is useful in silicon integrated circuits, transparent conductive electrodes for displays or photovoltaic devices and membranes. ADVANTAGE - The method is capable of easily and economically synthesizing the graphene single crystal films with high quality, mobility and carrier density, reduced size, good electronic conductivity and lower domain boundary density and without any defects. DETAILED DESCRIPTION - The method comprises loading (201) a metal and/or a dielectric on a substrate into a tube furnace and/or a cold wall chamber, introducing (203) hydrogen gas at a rate of 1-100 sccm into the tube furnace and/or the cold wall chamber at a pressure of 10-2 mTorr, heating (204) the metal and/or the dielectric on the substrate at 400-1400 degrees C, maintaining (205) the temperature (400-1400 degrees C) of the metal and/or the dielectric on the substrate for a duration of time of 0.1-60 minutes while the hydrogen gas is flowed into the tube furnace and/or the cold wall chamber, introducing (206) an organic compound to the metal and/or dielectric into the tube furnace and/or the cold wall chamber at a flow rate of 1-5000 sccm and a pressure of 10-780 mTorr while reducing the flow rate of hydrogen gas to less than 10 sccm for growing graphene from the organic compound on the metal and/or the dielectric over a period of time 0.001-120 seconds, increasing the flow rate of organic compound by 10-5000 sccm where graphene is grown from the organic compound on the metal and/or the dielectric over a period of time 0.01-600 seconds, and cooling the metal and/or the dielectric into the tube furnace and/or the cold wall chamber to room temperature. The metal comprises a copper foil having a width of 2 m, a length of 4 m and a thickness of 10 nm to 0.05 mm. DESCRIPTION OF DRAWING(S) - The diagram shows a flowchart of a method for synthesizing graphene. Loading a metal and/or a dielectric on a substrate into tube furnace and/or cold wall chamber (201) Evacuating the furnace or chamber (202) Introducing hydrogen gas into the furnace and/or chamber (203) Heating a metal and/or a dielectric on the substrate (204) Maintaining the temperature of the metal and/or the dielectric on the substrates (205) Introducing an organic compound to the metal and/or dielectric into the furnace and/or chamber. (206)