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  • 专利标题:   Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.
  • 专利号:   CN102701789-A, WO2013174139-A1, CN102701789-B, US2015132506-A1, US9951418-B2
  • 发明人:   DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F
  • 专利权人:   UNIV XIDIAN, GUO H, ZHANG K, ZHANG Y, DENG P, LEI T, ZHANG F, UNIV XIDIAN
  • 国际专利分类:   C04B041/50, C01B031/04, C23C016/02, C23C016/04, C23C016/26, C23C016/56, C01B032/186, C01B032/188
  • 专利详细信息:   CN102701789-A 03 Oct 2012 C04B-041/50 201304 Pages: 7 Chinese
  • 申请详细信息:   CN102701789-A CN10162173 23 May 2012
  • 优先权号:   CN10162173

▎ 摘　　要

NOVELTY - A structural graphene is produced on silicon carbide (SiC) substrate comprises cleaning SiC wafer to remove pollutant on its surface using plasma-enhanced chemical vapor deposition (PECVD); depositing a layer of silicon dioxide as a mask; coating mask surface with layer of photoresist, and exposing SiC to form structured pattern; heating to 700-1100 degrees C; introducing argon gas to quartz tube and mixed gas of chlorine gas for 3-8 minutes, the chlorine gas being reacted with the exposed SiC to form carbon film; and annealing at 1000-1200 degrees C for 10-30 minutes. USE - Method for preparing structural graphene on silicon carbide substrate (claimed) for manufacturing microelectronic devices. ADVANTAGE - The method has simple process and high safety. It provides smooth structured surface with low porosity. DESCRIPTION OF DRAWING(S) - The drawing shows a production method flow chart.