▎ 摘 要
NOVELTY - A structural graphene is produced on silicon carbide (SiC) substrate comprises cleaning SiC wafer to remove pollutant on its surface using plasma-enhanced chemical vapor deposition (PECVD); depositing a layer of silicon dioxide as a mask; coating mask surface with layer of photoresist, and exposing SiC to form structured pattern; heating to 700-1100 degrees C; introducing argon gas to quartz tube and mixed gas of chlorine gas for 3-8 minutes, the chlorine gas being reacted with the exposed SiC to form carbon film; and annealing at 1000-1200 degrees C for 10-30 minutes. USE - Method for preparing structural graphene on silicon carbide substrate (claimed) for manufacturing microelectronic devices. ADVANTAGE - The method has simple process and high safety. It provides smooth structured surface with low porosity. DESCRIPTION OF DRAWING(S) - The drawing shows a production method flow chart.