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  • 专利标题:   Manufacture of graphene for transparent electrode of transistor, involves supplying liquid metal in carbon source, contacting graphene seed on surface of liquid metal and growing graphene seed on surface of liquid metal.
  • 专利号:   KR2013000964-A, KR1878736-B1
  • 发明人:   WOO Y S, CHOI J Y, ZHIN Z, GUO H, CHOI W M
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   C01B031/02, C30B017/00, C30B029/02, H01B001/04
  • 专利详细信息:   KR2013000964-A 03 Jan 2013 C01B-031/02 201334 Pages: 10
  • 申请详细信息:   KR2013000964-A KR061795 24 Jun 2011
  • 优先权号:   KR061795

▎ 摘　　要

NOVELTY - A liquid metal is supplied in the carbon source, graphene seed is contacted on the surface of liquid metal, and graphene seed is grown on the surface of liquid metal, to obtain graphene. USE - Manufacture of graphene (claimed) used for transparent electrode of transistor. ADVANTAGE - The graphene is efficiently manufactured.