▎ 摘　　要

NOVELTY - The method involves providing an initial substrate. A surface of the initial substrate is formed with a thin-layer two-dimensional material. A first transfer film is formed on the surface of the initial substrate and thin-layer two-dimensional material, where adhesive force of a first surface of the first transfer film and the thin-layer two-dimensional material is greater than adhesive force of the initial substrate and the thin-layer two-dimensional material. The first transfer film is utilized to peel the thin-layer two-dimensional material from the surface of the initial substrate. A second transfer film is adhered on a second surface of the first transfer film. The second transfer film and the first transfer film are sequentially removed to realize transfer of the thin-layer two-dimensional material to a target substrate, where the second transfer film is a heat release transfer adhesive film. USE - Method for transferring a thin-layer two-dimensional material of an ultra-thin silicon target substrate and an array electrode. ADVANTAGE - The method enables manufacturing the material with high bonding force with the substrate to be accurately transferred to the target position of the target substrate, thus realizing manufacturing of rare or difficult-to-grow hetero-junctions or precisely building devices in easy manner, and hence realizing transfer application of the ultra-thin silicon target substrate and the array electrode. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for transferring a thin-layer two-dimensional material of a ultra-thin silicon target substrate and an array electrode. (Drawing includes non-English language text).