▎ 摘　　要

NOVELTY - Preparing an indium-phosphate (InP) thin film based on a gallium-arsenic (GaAs) substrate, comprises (i) selecting a GaAs substrate (10), (ii) growing a GaAs buffer layer (20) on the GaAs substrate (10), (iii) preparing a composite buffer layer (30) on the GaAs buffer layer (20), forming the composite buffer layer by alternating growth of a graphene layer (31) and a GaxIn1-xP material layer (32), where the lowermost layer is the graphene layer, and the uppermost layer is the GaxIn1-xP material layer, and (iv) growing an InP thin film (40) on the composite buffer layer. USE - The method is useful for preparing indium-phosphate thin film based on gallium-arsenic substrate. ADVANTAGE - The method is economical. DESCRIPTION OF DRAWING(S) - The drawing shows a structural schematic view of preparing an InP thin film based on a GaAs substrate. 10GaAs substrate 20GaAs buffer layer 30Composite buffer layer 31Graphene layer 32Gaxin1-xp material layer 40InP film