▎ 摘　　要

NOVELTY - The LED comprises a substrate comprising an epitaxial growth surface, a semiconductor epitaxial layer disposed on the epitaxial growth surface, a first electrode, a second electrode (160), a reflection layer, and a patterned graphene layer (110). The semiconductor epitaxial layer comprises a first semiconductor layer (120), an active layer (130), and a second semiconductor layer (140) stacked on the substrate. The active layer is disposed between the first and second semiconductor layers, and the first semiconductor layer is disposed on the epitaxial growth layer of the substrate. USE - The LED is useful as light sources in optical imaging systems such as displays and projectors. ADVANTAGE - The LED has higher energy conversion efficiency, radiance and response speed, longer lifespan and good reliability, and generates less heat. DETAILED DESCRIPTION - The LED comprises a substrate comprising an epitaxial growth surface, a semiconductor epitaxial layer disposed on the epitaxial growth surface, a first electrode, a second electrode (160), a reflection layer, and a patterned graphene layer (110). The semiconductor epitaxial layer comprises a first semiconductor layer (120), an active layer (130), and a second semiconductor layer (140) stacked on the substrate. The active layer is disposed between the first and second semiconductor layers, and the first semiconductor layer is disposed on the epitaxial growth layer of the substrate. The first electrode is electrically connected with the second semiconductor layer. The second electrode is electrically connected with the first semiconductor layer. The reflection layer covers the second semiconductor layer. The graphene layer: is disposed on the first semiconductor layer and the second semiconductor layer and disposed between the epitaxial surface of the substrate and the first semiconductor layer; is a structure consisting of graphene and a coating comprising graphene powders; has a thickness of 1 nm to 100 mu m and a dutyfactor of 1:100-100:1; comprises a graphene film consisting of a single layer of continuous carbon atoms; and defines apertures having sizes of 10 nm to 500 mu m. The dutyfactor is an area ratio between a covered area to an exposed area of the epitaxial growth surface. The first semiconductor layer is in contact with the substrate and the active layer through the apertures, and defines caves facing the substrate, where the caves and the substrate cooperatively form sealed chambers. The graphene layer is received in the sealed chambers. The graphene layer is further disposed on the first and second semiconductor layers and between the active layer and the first and second semiconductor layers. The second semiconductor layer is in contact with the active layer through the apertures. The graphene layer is enclosed in the first semiconductor layer and the second semiconductor layer. The reflection layer is located between the first electrode and the second semiconductor layer or located on a surface of the first electrode away from the second semiconductor layer. The first electrode is opaque and transparent electrodes, and covers entire second semiconductor layer. The first semiconductor layer further defines grooves into which the graphene layer is embedded. DESCRIPTION OF DRAWING(S) - The diagram shows a schematic three-dimensional view of a LED. Graphene layer (110) First semiconductor layer (120) Active layer (130) Second semiconductor layer (140) Second electrode. (160)