▎ 摘　　要

NOVELTY - The structure has a gaseous nitrogen buffer layer, an n-type heavily doped gaseous nitrogen layer, and a p-type gaseous nitrogen electron blocking layer, a non-doped gaseous nitrogen layer, and an aluminum gallium nitride barrier layer, a gate slot cell structure for extending from a top part of the cell structure unit to an n-type gaseous nitrogen layer. A side wall of a grid groove and a bottom side of a hole are formed on a gate dielectric layer. A substrate is made of silicon, Silicon carbide, aluminum nitride or Sapphire material. USE - Graphene buried radiating layer and longitudinal channel gaseous nitrogen metal insulator semiconductor FET cell structure. ADVANTAGE - The structure ensures stable turn-on operation of large threshold voltage of the device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene buried radiating layer and a longitudinal channel gaseous nitrogen metal insulator semiconductor FET cell structure preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene buried radiating layer and a longitudinal channel gaseous nitrogen metal insulator semiconductor FET cell structure.