▎ 摘　　要

NOVELTY - Silicon carbide sample is washed, placed in quartz tube and heated. Three-neck flask filled with carbon tetrachloride liquid is heated, and carbon tetrachloride steam is subjected to quartz tube. Carbon tetrachloride is reacted with silicon carbide to produce double-layer carbon membrane. Nickel film is deposited on silicon substrate. Carbon surface of double-layer carbon membrane is placed on nickel membrane, annealed, and nickel membrane is removed from double-layer graphene sample. Thus, graphene is manufactured on silicon carbide substrate. USE - Manufacture of graphene on silicon carbide substrate. ADVANTAGE - The method efficiently and safely provides graphene for sealing gas and liquid, by simple method. DETAILED DESCRIPTION - Silicon carbide sample is washed to remove pollutants on the surface. The washed silicon carbide is placed in a quartz tube, and heated at 750-1150 degrees C. A three-neck flask filled with carbon tetrachloride liquid is heated at 60-80 degrees C, and the carbon tetrachloride steam is subjected to quartz tube using argon gas. The carbon tetrachloride is reacted with silicon carbide to produce a double-layer carbon membrane. A nickel film having thickness of 350-600 nm, is deposited on a silicon substrate. The carbon surface of the double-layer carbon membrane is placed on the nickel membrane, and placed in argon gas atmosphere. The obtained product is annealed at 900-1100 degrees C for 10-20 minutes, to produce double-layer graphene. The nickel membrane is removed from the double-layer graphene sample. Thus, graphene is manufactured on silicon carbide substrate.