▎ 摘　　要

NOVELTY - A buffer layer high-k dielectric constant increasing method involves providing graphene thin film to grow high-k dielectric constant of rhodamine in ethanol, preparing organic buffer layer solution with concentration of 1-5 mg/ml, soaking graphene sample in buffer layer solution for 25-35 minutes, drying naturally at room temperature to form rhodamine organic buffer layer on the graphene layer with thickness of 1-10 nm. High-k dielectric constant is grown on organic buffer layer by an atomic layer deposition method at deposition temperature of 100-200 degrees C. USE - Method for increasing high-k dielectric constant on a buffer layer of graphene that is utilized for manufacturing a carbon-based integrated circuit.