• 专利标题:   Method for forming graphene biosensor utilized in e.g. life sciences, for affinity based sensing, involves forming sensor with dielectric layer placed on substrate, and removing sacrificial layer from channel.
  • 专利号:   US2011227043-A1
  • 发明人:   GUO D, HAN S, LIN C, SU N
  • 专利权人:   INT BUSINESS MACHINES CORP
  • 国际专利分类:   H01L021/336, H01L029/786
  • 专利详细信息:   US2011227043-A1 22 Sep 2011 H01L-029/786 201163 Pages: 9 English
  • 申请详细信息:   US2011227043-A1 US727434 19 Mar 2010
  • 优先权号:   US727434

▎ 摘  要

NOVELTY - The method involves forming a channel (102) in a substrate (100) i.e. buried oxide (BOX) substrate. A sacrificial layer is formed in the channel. A sensor is formed with a dielectric layer (302) placed on the substrate. A graphene layer (304) is placed on the dielectric layer, and another dielectric layer (306) is placed on the graphene layer, a source region, and a gate region, where the gate region is placed on the sacrificial layer. The sacrificial layer is removed from the channel. A capping layer is placed on the sensor, the substrate, and the sacrificial layer from the channel. USE - Method for forming a sensor i.e. graphene biosensor, utilized in life sciences, clinical diagnostics, and medical research for affinity based sensing. ADVANTAGE - The method enables the dielectric layer between the fluid in the flow path and the graphene layer, so as to improve the sensitivity of the device in an easy manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a sensor comprising a dielectric layer. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a method for forming a graphene sensor. Substrate (100) Channel (102) Dielectric layers (302, 306) Graphene layer (304)