▎ 摘　　要

NOVELTY - Preparing graphene film by carbon dioxide combined low pressure chemical vapor deposition comprises cleaning the metal substrate and placing into a reaction furnace for vacuumizing until the vacuum degree is 2-6 torr or 300-800 pa, introducing carbon dioxide and/or helium gas to pre-treat the gas, performing high temperature annealing treatment to the metal substrate after gas pre-treatment, annealing at 900-1050 degrees C in the mixed gas of hydrogen and argon gas, keeping for 10-60 minutes, introducing gas carbon source and hydrogen, keeping for 1-60 minutes at 900-1050 degrees C for chemical vapor deposition. USE - The method is useful for preparing graphene film by carbon dioxide combined low pressure chemical vapor deposition. ADVANTAGE - The method adopts carbon dioxide combined with low pressure system to prepare graphene film, which can eliminates potholes, bumps and pores on the surface of graphene film in normal pressure experiments while improving the quality of graphene, the source of carbon is wide; is suitable for industrial production and is economical.