▎ 摘　　要

NOVELTY - The method involves forming a dielectric layer. A carbon layer is formed over the dielectric layer. A metal layer is formed over the carbon layer. An anneal process is performed, where some of the carbon layers is transformed into graphene during the anneal process. The metal layer is removed after performing the anneal process and the graphene is etched to define a channel (110) from the graphene, where a gate extends around the source and drain regions from a first side (111) of the channel to a second side (114) of the channel opposite the first side after performing the etching process. USE - Method for forming a semiconductor device i.e. transistor. ADVANTAGE - The method enables utilizing one of in-plane gates to improve electron mobility of a semiconductor device by positioning the in-plane gate in a same plane as one of a graphene channel, a first active area or a second active area. DETAILED DESCRIPTION - The carbon layer is an amorphous carbon layer. DESCRIPTION OF DRAWING(S) - The drawing shows a top view of a semiconductor device at a stage of fabrication. Semiconductor device (100) Active Area (106) Channel (110) Sides (111, 114) In-plane Gate (116)