▎ 摘　　要

NOVELTY - The method involves forming (S110) a sacrificial layer on a carrier substrate. A graphene layer is transferred and laminated (S120) on the sacrificial layer to expose a portion of the sacrificial layer. A gallium nitride buffer layer is formed (S130) on the graphene layer. A gallium nitride crystal layer is grown (S140) on the gallium nitride buffer layer. The sacrificial layer on the carrier substrate is removed (S150) to lift off the graphene layer, the gallium nitride buffer layer, and the gallium nitride crystal layer from the carrier substrate, where the carrier substrate is made of quartz material, the sacrificial layer comprises a same area as the carrier substrate, the graphene layer comprises a smaller area than the sacrificial layer and the carrier substrate, and a portion of the sacrificial layer is exposed to an outer side of a fin layer. USE - Method for separating a graphene layer, a gallium nitride buffer layer and a gallium nitride crystal layer from a carrier substrate, and a light emitting device using a sacrificial layer. ADVANTAGE - The method enables forming gallium nitride buffer layer on the graphene layer by low temperature process when the gallium nitride crystal layer is grown by high temperature process to easily separate the graphene layer, the gallium nitride buffer layer and the gallium nitride crystal layer from the carrier substrate using the sacrificial layer, thus minimizing damage of the graphene layer due to high temperature. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for separating a graphene layer, a gallium nitride buffer layer and a gallium nitride crystal layer from a carrier substrate, and a light emitting device using a sacrificial layer. '(Drawing includes non-English language text)' Step for forming sacrificial layer on carrier substrate (S110) Step for transferring and laminating graphene layer on sacrificial layer to expose portion of sacrificial layer (S120) Step for forming gallium nitride buffer layer on graphene layer (S130) Step for growing gallium nitride crystal layer on gallium nitride buffer layer (S140) Step for removing sacrificial layer on carrier substrate to lift off graphene layer, gallium nitride buffer layer, and gallium nitride crystal layer from carrier substrate (S150)