▎ 摘　　要

NOVELTY - Light emitting transistor comprises light emitting layer composed of semiconductor material. The grid electrode is arranged on a side of the light-emitting layer. The source electrode and drain electrode are arranged on the other side of gate insulating layer arranged between gate and light emitting sheet. The gate insulating layer is provided with an organic insulating material and an organic fluorescent dye doped in the organic insulating material. The semiconductor materials of the organic fluorescent doped dye are connected with light emission layer to generate fluorescence resonance energy transfer. USE - The light emitting transistor e.g. field-effect transistor (FET) and organic light-emitting diode (OLED) is useful in light emitting device. ADVANTAGE - The light emitting transistor transfers exciton energy formed by the semiconductor material of the light emitting layer to the gate insulating layer doped by the organic fluorescent dye to emit light based on the fluorescence resonance energy transfer, realizes charge transmission and light emitting layer separation, fully exerts characteristic of the semiconductor material, maintains high mobility, improves luminous efficiency, and improves luminous performance of the device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic principle view of a light-emitting transistor (Drawing includes non-English language text).