▎ 摘　　要

NOVELTY - Method for preparing self-supporting nitride substrate, involves (i) providing a substrate on which a layer of two-dimensional (2D) material having a polarity is formed, and forming a graphene layer on the 2D material layer, where the graphene layer has a single-layer structure, and (ii) forming a nitride thick film on the surface of the single-layer graphene layer, removing the substrate by mechanical peeling, removing the 2D material layer and the graphene layer by grinding and polishing treatment, and obtaining flat nitride thick film as a target product. USE - The method is useful for preparing self-supporting nitride substrate. ADVANTAGE - The method provides high-quality self-supporting nitride substrate, realizes the growth of nitride thick films on the surface of non-defective graphene, effectively reduces defects at the interface, and improves the crystal quality of the self-supporting nitride substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a self-supporting nitride substrate growth structure comprising the above-mentioned substrate, graphene layer and nitride thick film.