▎ 摘　　要

NOVELTY - The method involves forming a graphene thin film on a germanium (Ge)-based substrate. The graphene thin film is formed with a graphite alkene insulating thin layer. A fluorinated graphene surface is formed with an atomic layer and matched with a graphite fluoride dilute surface fragrance k gate medium. A high-k gate dielectric is formed on a surface metal electrode. A part of the surface metal electrode and the high-k gate dielectric are removed from the graphene thin film. A MOS device is provided with source and drain regions. The graphene thin film is extended toward a metal substrate. USE - Graphene modulated high-k metal gate germanium-based MOS device manufacturing method. ADVANTAGE - The method enables improving product quality, insulator quality and electrical performance of graphene modulated high-k metal gate germanium-based MOS device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene modulated high-k metal gate germanium-based MOS device.