▎ 摘　　要

NOVELTY - The method involves fixing a gate electrode layer on a flexible plastic substrate by using a printing or magnetic control sputtering process. An upper gate electrode layer is covered on an insulating medium layer. Multiple graphene-containing layers are formed on the insulating medium layer by using a printing process. A di-sulfide thin film layer is fixed on an upper graphene layer. An upper di-sulfide thin film is fixed on each graphene-containing layer and a gate dielectric layer. Two electrode layers are fixed on a graphene layer and the upper di-sulfide thin film. USE - Graphene photo-electric transistor upper flexible substrate manufacturing method. ADVANTAGE - The method enables manufacturing a graphene photo-electric transistor upper flexible substrate at low cost. DETAILED DESCRIPTION - The insulating medium layer is made of silicon nitride, silicon oxide, hafnium oxide or aluminum oxide. DESCRIPTION OF DRAWING(S) - The drawing shows a partial sectional view of a graphene photo-electric transistor upper flexible substrate.