• 专利标题:   Manufacture of graphene film used for e.g. semiconductor, involves arranging substrate, providing metallic catalytic material and reducing gas, raising temperature, providing carbon-containing gas, and generating carbon atoms.
  • 专利号:   US2015104566-A1, TW201514331-A, TW592509-B1
  • 发明人:   YEN W, CHUEH Y, YEN W C, CHUEH Y L
  • 专利权人:   YEN W, CHUEH Y, UNIV NAT TSINGHUA
  • 国际专利分类:   C01B031/02, C01B031/04, H01B001/04, C23C016/32
  • 专利详细信息:   US2015104566-A1 16 Apr 2015 C01B-031/02 201529 Pages: 19 English
  • 申请详细信息:   US2015104566-A1 US457463 12 Aug 2014
  • 优先权号:   TW137005

▎ 摘  要

NOVELTY - Manufacture of graphene film involves arranging (S10) substrate in reaction chamber including inlet and outlet, providing (S20) metallic catalytic material in the reaction chamber, providing (S30) reducing gas into the reaction chamber, raising (S40) the temperature of the reaction chamber to deposition temperature, providing (S50) carbon-containing gas into the reaction chamber, and generating carbon atoms (S60) from the carbon-containing gas in the assistance of the metallic catalytic material and the atoms deposited on the substrate. USE - Manufacture of graphene film. Uses include but are not limited to semiconductor, touch panel, solar cell and transparent electrode for field effect transistors. ADVANTAGE - The method enables manufacture of high-quality graphene film having large area with high flexibility and low reflectance. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of graphene film. Arrangement process (S10) Provision of metallic catalytic material (S20) Providian of reducing gas (S30) Temperature raise process (S40) Provision of carbon-containing gas (S50) Generation process (S60)