• 专利标题:   Manufacturing method of noncatalytic substrate growth graphene, involves forming board layer on substrate, and enhancing concentration of carbon containing gas, and forming megacryst by graphene.
  • 专利号:   KR2016059465-A
  • 发明人:   LEE Y T
  • 专利权人:   LEE Y T
  • 国际专利分类:   B05D001/00, C01B031/04, C23C016/26
  • 专利详细信息:   KR2016059465-A 26 May 2016 C01B-031/04 201640 Pages: 58
  • 申请详细信息:   KR2016059465-A KR027937 08 Mar 2016
  • 优先权号:   KR160619, KR027937

▎ 摘  要

NOVELTY - The method involves forming board layer on substrate. The concentration of carbon containing gas (300) is enhanced, and the PECVD is performed. The growth direction of the graphene grown in the given area of the board layer is the parallel direction. The megacryst is formed by graphene (500). The pressure control valve opening and needle opening are provided. USE - Manufacturing method of noncatalytic substrate growth graphene. ADVANTAGE - The manufacturing cost of the substrate growth graphene is reduced efficiently. The substrate growth graphene is efficiently manufactured. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating the manufacturing method of the noncatalytic substrate growth graphene. Board layer (100) Carbon-containing gas (300) Graphene (500)