▎ 摘　　要

NOVELTY - Graphene growth involves pre-depositing nickel film on insulating substrate at lower atmospheric pressure. Carbon content are dispersed on the insulating substrate through surface segregation process, which led to the formation of graphene film on upper and lower side of the insulating substrate. The nickel film is removed from the the insulating substrate for in situ growth of graphene films. Etiching solution is required for the formation of nickel film. USE - Double-flame method for growing graphene on insulating substrate (claimed). ADVANTAGE - The double-flame method enables to grow graphene in an energy saving and cost-effective manner.