• 专利标题:   Non-metallic substrate graphene growing method, involves cleaning non-metallic substrate surface and blown dry with nitrogen, and locating thin metal layer substrate on CVD reaction chamber.
  • 专利号:   CN104900497-A
  • 发明人:   DENG J, FAN X, GUO W, SUN J, XU C, XU K
  • 专利权人:   UNIV BEIJING TECHNOLOGY
  • 国际专利分类:   H01L021/205, H01L033/40
  • 专利详细信息:   CN104900497-A 09 Sep 2015 H01L-021/205 201573 Pages: 7 Chinese
  • 申请详细信息:   CN104900497-A CN10331057 15 Jun 2015
  • 优先权号:   CN10331057

▎ 摘  要

NOVELTY - The method involves cleaning a non-metallic substrate surface and blown dry with nitrogen. A thickness of a thin metal layer substrate is 1-10nm. The thin metal layer substrate is located on a CVD reaction chamber. USE - Non-metallic substrate graphene growing method. ADVANTAGE - The method enables simplifying cleaning process and avoiding potential problem in a better manner. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a non-metallic substrate graphene growing method. '(Drawing includes non-English language text)'