▎ 摘　　要

NOVELTY - The sensor has a silicon wafer provided with a nanographene photosensitive material layer. An electrode layer is formed directly in a part of an upper surface of the silicon wafer. The nanographene photosensitive material layer is formed in a part of an upper surface of the electrode layer and in the part of the upper surface of the silicon wafer. A photonic crystal layer is formed in a remaining part of the upper surface of the electrode layer, in an upper surface of the nanographene photosensitive material layer and in a remaining part of the upper surface of the silicon wafer. USE - Graphene infrared sensor i.e. quantum sensor. ADVANTAGE - The sensor improves a light response rate as a nano-graphene material as a photosensitive material is used and a photonic crystal is added to aggregate specific wavelength infrared ray. The sensor reduces cost by utilizing a simple preparation process. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene infrared sensor.