▎ 摘　　要

NOVELTY - A manufacturing method of graphene comprises the following steps: providing a substrate and disposing a carbon source on the substrate, wherein the substrate is made of cobalt or nickel; placing the substrate in a heating furnace, wherein the heating furnace provides a heating temperature between 1000 DEG C and 1300 DEG C and an atmosphere environment for a predetermined period of time so as to allow the carbon source to permeate the substrate; and continuously cooling the heating furnace at a cooling rate between 0.1 DEG C/min and 5 DEG C/min so as to enable the carbon source permeating the substrate to be recrystallized for precipitating the graphene attached onto the substrate. The growth rate of the graphene is increased at a low cooling rate between 0.1 DEG C/min and 5 DEG C/min, and the graphene obtained after the process is finished has a diameter value (La) between 1 less than mu greater than m and 50 less than mu greater than m obtained by a Raman spectroscopy.