▎ 摘　　要

NOVELTY - A high-temperature film is provided as substrate, holes are cut in the substrate and metal powder is coated in the holes. The substrate is heated in reaction chamber, carbon source gas is passed, annealed, cooled, and graphene film is grown on edge of the hole and the metal substrate surface. The metal substrate is scrapped from the side of graphene, an adhesive layer is formed and scrapped, to obtain graphene-metal substrate. The resultant product is immersed in etching solution, metal substrate is etched and cleaned, to obtain large-area graphene intermediate. USE - Preparation of large-area graphene intermediate (claimed). DETAILED DESCRIPTION - A high-temperature film is provided as substrate, 2 or more holes connected to one another are cut in the substrate, metal powder is coated in the hole and metal substrate is embedded in the hole, to obtain substrate. The obtained substrate is added to a reaction chamber, evacuated, maintained under pressure of 1000-1500 Pa, argon gas and hydrogen gas are passed to reaction chamber, heated at 850-1080 degrees C, heat-preserved for 25-35 minutes, carbon source gas is passed into the chamber, maintained for 8-18 minutes, ventilated, annealed, cooled to room temperature, and graphene film is grown on edge of the hole and the metal substrate surface. The metal substrate is scrapped from the side of graphene, an adhesive layer is formed by applying viscous adhesive on the other side of the substrate and metal substrate surface, and scrapped, to obtain graphene-metal substrate. The resultant product is immersed in etching solution, metal substrate is etched and substrate surface is cleaned, to obtain large-area graphene intermediate.