▎ 摘　　要

NOVELTY - The method involves forming an insulating layer (110) on semiconductor substrate. Recessed cavity (115) is formed in insulating layer. Graphene membrane (120,125) is formed on surface of insulating layer completely covering recessed cavity. First and second sense electrodes (130-133) are formed on insulating layer on opposing sides of graphene membrane. Sealing ring (140) is formed around outer sidewalls of two sense electrodes and graphene membrane such that sealing ring encircles entire perimeter region of recessed cavity on surface of insulating layer. USE - Method for forming semiconductor pressure sensor device for measuring pressure of gases or liquids in various control and real-time monitoring applications and for indirectly measuring variables such as fluid flow, gas flow, speed, water level, and altitude. ADVANTAGE - The sealing ring serves to prevent external gases from leaking underneath the supported graphene membrane from under the side edges of the supported graphene membrane and from under the side edges of the sense electrodes. The combination of the suspended graphene membrane, sense electrodes and the sealing ring serve to seal the air or vacuum within the recessed cavity and prevent any test gases from infiltrating the recessed cavity during use. The sensitivity and reliability of semiconductor pressure sensor device can be improved. The pressure sensor can be operated with higher sensitivity. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the semiconductor pressure sensor device. Insulating layer (110) Recessed cavity (115) Graphene membranes (120,125) Sense electrodes (130-133) Sealing ring (140)