▎ 摘　　要

NOVELTY - The detector has a back electrode (1), a silicon chip (2), an aluminum oxide layer (3), a graphene layer (4) and a front electrode (5), which are orderly arranged from bottom to top. The silicon chip is n or p type, and thickness of the aluminum oxide layer is 0.2-10 nanometers. The back electrode and the front electrode are made of material selected from a group consisting of gold, palladium, silver, titanium, chromium, nickel and indium-gallium alloy. USE - Surface passivated graphene/silicon photoelectric detector. ADVANTAGE - The detector has simple technique and low cost, and is convenient to popularize. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a surface passivated graphene/silicon photoelectric detector preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a surface passivated graphene/silicon photoelectric detector. Back electrode (1) Silicon chip (2) Aluminum oxide layer (3) Graphene layer (4) Front electrode (5)