▎ 摘　　要

NOVELTY - Preparing copper-indium-gallium-selenium (CIGS) thin film solar battery component, comprises (i) depositing barrier layer and back electrode layer on glass substrate; (ii) etching first scribe line on back electrode, separating the back electrode layer, and forming the first slit; (iii) manufacturing a PN junction layer on the back electrode layer; (iv) etching the second scribe line on the PN junction layer, and separating PN junction layer to form a current connection channel; (v) utilizing magnetron sputtering method to make the front electrode layer on the PN junction layer; (vi) preparing conductive grid lines on the front electrode layer using the fixed-distance multi-pinhole inkjet method, perpendicular to the direction of the first scribe line and the second scribe line, placing directly into the drying box to dry the conductive grid wire, and cooling, and performing the scribing of the third scribing line; and (vii) cleaning, collecting, testing, laminating and packaging. USE - The method is useful for preparing copper-indium-gallium-selenium thin film solar battery component. ADVANTAGE - The copper-indium-gallium-selenium thin film solar battery component is simple, easy to control, and improves the production yield, reduces the production cost, and is good for mass production. The conductive grid line is used as conductive drainage, which effectively ensures the conductivity of the battery, greatly improves the transmittance of battery, increases the absorption of battery in each light wave band, and increases the short circuit current, which improves the performance of battery and the photoelectric conversion efficiency of battery. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a copper-indium-gallium-selenium thin film solar battery component. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic structural view of a copper-indium-gallium-selenium thin film solar battery component. 1Glass substrate 2Barrier layer 3Back electrode layer 4Copper-indium-gallium-selenium absorption layer 5High resistance layer 6Front electrode layer 7Conductive gate line P1First scribing line P2Second scribe line P3Third scribing line