▎ 摘　　要

NOVELTY - Preparation of indium sulfide nanosheet array/three-dimensional foamed graphene involves placing nickel foam in quartz tube furnace, performing chemical vapor deposition, cooling to form graphene-wrapped nickel foam, dissolving polymethyl methacrylate in ethyl lactate, stirring to obtain mixed solution, dripping mixed solution onto graphene-wrapped nickel foam using sample gun, heat preserving to obtain polymethyl methacrylate-coated graphene foam, cutting polymethyl methacrylate-coated graphene foam into cubes, immersing cubes in hydrochloric acid solution to obtain three-dimensional graphene foam with nickel removed, dripping indium sulfide seed layer solution to foamed graphene using sample gun, heat preserving to obtain three-dimensional graphene foam/indium-tin oxide glass with indium sulfide seed layer, ultrasonically cleaning indium-tin oxide glass in acetone for 15-20 minutes, ultrasonically cleaning in ethanol for 15-20 minutes and deionized water and naturally drying. USE - Preparation of indium sulfide nanosheet array/three-dimensional foamed graphene used as working electrode for supercapacitor (claimed). ADVANTAGE - The method produces indium sulfide nanosheet array/three-dimensional foamed graphene with high specific capacitance of 530.7 F/g at current density of 1 A/g. After being assembled into symmetrical supercapacitor, the graphene electrode material still has capacitance retention rate of 84.6% after 1000 cycles of charge and discharge at current density of 1 A/g. DETAILED DESCRIPTION - Preparation of indium sulfide nanosheet array/three-dimensional foamed graphene involves placing nickel foam with density of 420-440 g/m2 and thickness of 1.6-2.0 mm in center of quartz tube furnace, performing chemical vapor deposition method under protection of argon atmosphere at flow rate of 480-500 sccm and hydrogen with flow rate of 180-200 sccm, heating to 1000-1100 degrees C at rate of 20-40 degrees C/minute for 30-60 minutes, introducing methane gas into tube furnace at rate of 5-10 sccm for 5-20 minutes, cooling to room temperature at rate of 80-100 degrees C/minute to obtain graphene-wrapped nickel foam, dissolving 4-5 %mass polymethyl methacrylate in ethyl lactate, stirring at 80-120 degrees C for 1-2 hours to obtain mixed solution, dripping 100-200 mu L/cm2 mixed solution onto graphene-wrapped nickel foam using sample gun, naturally drying at room temperature, heat preserving at 150-200 degrees C for 0.5-1 hour to obtain polymethyl methacrylate-coated graphene foam, cutting polymethyl methacrylate-coated graphene foam into cubes with surface area of 0.5-2 cm2, immersing cubes into 3-4 mol/L hydrochloric acid solution at 80-90 degrees C for 4-6 hours to obtain three-dimensional graphene foam with nickel removed, dripping 50-100 mu L/cm2 indium sulfide seed layer solution to foamed graphene using sample gun, heat preserving at 150-200 degrees C for 40-60 minutes to obtain three-dimensional graphene foam/indium-tin oxide glass with indium sulfide seed layer, ultrasonically cleaning indium-tin oxide glass in acetone for 15-20 minutes, ultrasonically cleaning in ethanol for 15-20 minutes and deionized water for 15-20 minutes, and naturally drying to room temperature or preparing indium sulfide seed layer solution by dissolving 0.01-0.03 mol/L indium chloride tetrahydrate and 0.05-0.07 mol/L thioacetamide in 5-10 mL ethanol, magnetically stirring at 450-550 rpm for 3-5 minutes, dripping indium sulfide seed layer solution on three-dimensional graphene, drying at 180-200 degrees C for 1-2 hours, dissolving 0.01-0.03 mol/L indium chloride tetrahydrate and 0.05-0.07 mol/L thioacetamide in 60-70 mL ethylene glycol solution, stirring and pouring into reactor, placing three-dimensional graphene foam with indium sulfide seed layer in reactor, hydrothermally reacting at 180-200 degrees C for 12-24 hours, washing with deionized water and freeze-drying.