• 专利标题:   Formation method of graphene film, involves reducing and electrically depositing oxidized graphene on surface of working electrode.
  • 专利号:   CN102051651-A
  • 发明人:   LIU R, ZHANG X, LIU C, LUO S, TANG Y, TENG Y, ZHANG G
  • 专利权人:   UNIV HUNAN
  • 国际专利分类:   C25D009/08
  • 专利详细信息:   CN102051651-A 11 May 2011 C25D-009/08 201154 Pages: 7 Chinese
  • 申请详细信息:   CN102051651-A CN10004775 11 Jan 2011
  • 优先权号:   CN10004775

▎ 摘  要

NOVELTY - The method involves: taking a conductive substrate as working electrode; putting working electrode, counter electrode and reference electrode to a water dispersion solution of oxidized graphene; and reducing and electrically depositing the oxidized graphene on the surface of the working electrode. USE - Formation method of graphene film used in various applications. Uses include but are not limited to a sensor, a transistor, a transparent electrode, a capacitor, a catalyst, or a composite material. ADVANTAGE - Provides graphene film which has controllable thickness, size, uniformity, continuity and crystallization performance.