• 专利标题:   Photoresist material comprises graphene nanosheets having two-dimensional network structure and uniformly dispersed in phenolic resin, which forms three-dimensional network-shaped structure.
  • 专利号:   CN111443572-A
  • 发明人:   REN Y, FANG Q
  • 专利权人:   WUHAN CHINA STAR OPTOELECTRONICS TECHNOL
  • 国际专利分类:   G02F001/1335, G03F007/004
  • 专利详细信息:   CN111443572-A 24 Jul 2020 G03F-007/004 202066 Pages: 8 Chinese
  • 申请详细信息:   CN111443572-A CN10315875 21 Apr 2020
  • 优先权号:   CN10315875

▎ 摘  要

NOVELTY - Photoresist material comprises phenolic resin and graphene nanosheets. The graphene nanosheets have two-dimensional network structure. The graphene nanosheets are uniformly dispersed in the phenolic resin. The phenolic resin forms a three-dimensional network-shaped structure. USE - Used as photoresist material. ADVANTAGE - The material: utilizes graphene nanocrystals as black pigment; uniformly disperses ultra-thin reticulated graphene nanocrystals in resin matrix; is not easy to agglomerate, excellent to formation of three-dimensional reticular structure of resin; and enhances crosslinking degree of the resin. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) a display panel, comprising a substrate, and photoresist material provided on the substrate; and (2) preparation the display panel, comprising providing substrate, coating the photoresist material, and exposing the photoresist material. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the photoresist material.