• 专利标题:   Preparation of two-dimensional chromium material involves mixing chromium source with additive material to form first gaseous precursor and processing sulfide source to form second gaseous precursor, and transferring first and second gaseous precursors to substrate and heating obtained substrate.
  • 专利号:   CN115074695-A
  • 发明人:   XIAO H, XU M
  • 专利权人:   UNIV ZHEJIANG
  • 国际专利分类:   C23C016/30, C23C016/44, C23C016/46
  • 专利详细信息:   CN115074695-A 20 Sep 2022 C23C-016/30 202292 Chinese
  • 申请详细信息:   CN115074695-A CN10289827 15 Mar 2021
  • 优先权号:   CN10289827

▎ 摘  要

NOVELTY - Preparation of two-dimensional chromium material (I), involves vacuumizing reaction chamber and making background vacuum reach 1x100Pa to 1x10-3Pa, mixing chromium source with additive material capable of reducing formation energy of chromium material (I), so that the mixture forms a first gaseous precursor and processing X source to form a second gaseous precursor, where the chromium source is chormium chloride, chromium bromide or chromium iodide, and X source is sulfur powder, selenium powder or hydrogen sulfide, and transferring first gaseous precursor and second gaseous precursor to substrate under reducing or oxidizing atmosphere for chemical reaction and subjecting the substrate to stepwise heating and constant temperature treatment during chemical reaction. USE - Preparation of two-dimensional chromium material. ADVANTAGE - The preparation method can effectively improve yield of preparing chromium material (I). DETAILED DESCRIPTION - Preparation of two-dimensional chromium material of formula: CrX2(I), involves vacuumizing reaction chamber and making background vacuum reach 1x100Pa to 1x10-3Pa, mixing chromium source with additive material capable of reducing formation energy of chromium material (I), so that the mixture forms a first gaseous precursor and processing X source to form a second gaseous precursor, where the chromium source is chormium chloride, chromium bromide or chromium iodide, and X source is sulfur powder, selenium powder or hydrogen sulfide, and transferring first gaseous precursor and second gaseous precursor to substrate under reducing or oxidizing atmosphere for chemical reaction and subjecting the substrate to stepwise heating and constant temperature treatment during chemical reaction. X=S or Se.