• 专利标题:   Topological insulator array photoelectric detector based on graphene two-dimensional material protection layer comprises a substrate in order from bottom to top and topology insulator film.
  • 专利号:   CN107425081-A, CN107425081-B
  • 发明人:   SUN H, CHI Y, JIANG T, FANG L
  • 专利权人:   UNIV NAT DEFENSE TECHNOLOGY, UNIV NAT DEFENSE TECHNOLOGY
  • 国际专利分类:   H01L031/028, H01L031/0352, H01L031/10, H01L031/18
  • 专利详细信息:   CN107425081-A 01 Dec 2017 H01L-031/028 201807 Pages: 13 Chinese
  • 申请详细信息:   CN107425081-A CN10508556 28 Jun 2017
  • 优先权号:   CN10508556

▎ 摘  要

NOVELTY - Topological insulator array photoelectric detector based on graphene two-dimensional material protection layer comprises a substrate in order from bottom to top, topology insulator film, graphene two-dimensional material protective layer and ITO array electrode. The topological insulator film and the graphene two-dimensional material protective layer are not disposed between the array units of the ITO array electrodes. The topological insulator film is opposite the doping type of the substrate. USE - Used as topological insulator array photoelectric detector based on graphene two-dimensional material protection layer. ADVANTAGE - The protection layer: can be compatible with the traditional micro-nano process, reduces unit detector size and improves the integration. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing topological insulator array photodetector based on graphene two-dimensional material protective layer, comprising (i) using the molecular beam epitaxy method to grow topological insulator film with the opposite type of substrate doping on the substrate, (ii) taking the graphene two-dimensional material protective layer/PMMA stack structure is obtained by a wet transfer method and the graphene two-dimensional material protective layer/PMMA stacked structure and transferring onto the topological insulator film obtained in the step (i), removing PMMA to obtain substrate/topological insulator film/graphene two-dimensional material protective layer stack structure, (iii) preparing magnetron sputtering ITO array electrodes on the substrate/topological insulator film/graphene two-dimensional material protective layer stack structure obtained in the step (ii) through photolithography to obtain stack structure with ITO array electrodes, (iv) etching the reactive ion etching the topological insulator film and the graphene two-dimensional material protective layer between the array elements of the ITO array electrode obtained in the step (iii) to obtain opological insulator array type photodetector based on graphene two-dimensional material protective layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the topological insulator array photoelectric detector based on graphene two-dimensional material protection layer.