▎ 摘　　要

NOVELTY - Graphene growth method comprises providing germanium substrate, performing ion implantation on germanium substrate, annealing to deposit implanted ions in germanium substrate to increase the nucleation site of graphene on the surface of germanium substrate, providing carbon source and growing graphene on the surface of germanium substrate. USE - Method for carrying out graphene growth used for increasing the nucleation density of graphene (claimed). ADVANTAGE - The method greatly increases the growth rate of graphene; is good for reducing the production cost of graphene; and can modulate the nucleation density of graphene by adjusting the ion implantation dose and implantation energy.