▎ 摘　　要

NOVELTY - Self-healing memory device comprises a lower electrode (110), and a polymer nanocomposite layer (120) formed on the lower electrode, when a structural defect occurs, the polymer nanocomposite layer repairs the structural defect and restores a memory function damaged due to the structural defect through a self-healing mechanism characterized by movement of a polymer material and hydrogen bonding. An upper electrode (130) formed on the polymer nanocomposite layer. USE - Self-healing memory device. ADVANTAGE - The self-healing memory device has improved durability and usability due to its self-healing characteristics, and is capable of storing information input by a charge transport mechanism, and exhibits stable data preservation characteristics under high temperature (80℃) and high humidity (80% humidity) conditions. In addition, as a result of analysis based on the obtained data, and preserve data for 10 years. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of manufacturing a self-healing memory device, which involves: (a) forming a lower electrode on a substrate; (b) forming a polymer nanocomposite layer on the lower electrode; and (c) forming an upper electrode on the polymer nanocomposite layer, when a structural defect occurs, the polymer nanocomposite layer repairs the structural defect through a self-healing mechanism characterized by movement of a polymer material and hydrogen bonding. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a self-healing memory device. 110Lower electrode 120Polymer nanocomposite layer 130Upper electrode