• 专利标题:   Improving graphene deposition involves exposing substrate surface to oxygenating plasma to improve substrate surface quality or deposition parameter, where oxygenating plasma comprises oxygen or water, oxygenating plasma is microwave plasma, remote plasma, conductively coupled plasma.
  • 专利号:   US2022172948-A1, US11682556-B2
  • 发明人:   YIEH E Y, NEMANI S D, YING C C, LIANG Q, CHEN E, ZHOU J
  • 专利权人:   APPLIED MATERIALS INC
  • 国际专利分类:   C23C016/02, C23C016/26, H01L021/02
  • 专利详细信息:   US2022172948-A1 02 Jun 2022 H01L-021/02 202253 English
  • 申请详细信息:   US2022172948-A1 US672305 15 Feb 2022
  • 优先权号:   US737868P, US672305

▎ 摘  要

NOVELTY - Improving graphene deposition involves exposing a substrate surface to an oxygenating plasma to improve substrate surface quality or deposition parameter. The oxygenating plasma comprises oxygen or water. The oxygenating plasma is a microwave plasma, a remote plasma, a conductively coupled plasma or an inductively coupled plasma. The substrate surface is exposed to the oxygenating plasma at a temperature less than or equal to about 800 degrees Celsius. The substrate surface quality is selected from increased smoothness, decreased hydrogen concentration or decreased contamination. The deposition parameter is selected from increased film thickness, decreased film resistance, or increased uniformity. USE - Method for improving graphene deposition. ADVANTAGE - The method enables improving graphene deposition at lower temperatures, and providing graphene layers with lower resistance, graphene layers in a relatively short period of time.