• 专利标题:   Preparation of graphene-reinforced copper base composite material by putting copper powder in plasma enhanced chemical vapor deposition vacuum device, introducing carbon source gas, depositing, and sintering obtained composite powder.
  • 专利号:   CN103773985-A, CN103773985-B
  • 发明人:   CAO J, FENG J, QI J, ZHANG L, ZHANG T
  • 专利权人:   HARBIN INST TECHNOLOGY
  • 国际专利分类:   B22F009/12, B22F009/30, C22C001/04, C22C001/10, C22C009/00
  • 专利详细信息:   CN103773985-A 07 May 2014 C22C-001/04 201444 Pages: 11 Chinese
  • 申请详细信息:   CN103773985-A CN10066469 26 Feb 2014
  • 优先权号:   CN10066469

▎ 摘  要

NOVELTY - Graphene-reinforced copper base composite material is prepared by putting copper powder in a plasma enhanced chemical vapor deposition vacuum device, pumping vacuum, inletting hydrogen gas, raising temperature of gas from 500 degrees C to 700 degrees C, and depositing copper, and preserving heat for 25-35 minutes; introducing argon and carbon source gas and depositing for 10-300 seconds; stopping inletting carbon source gas, and cooling to room temperature to obtain graphene/copper composite powder; and sintering composite powder at 900-1000 degrees C for 2-3 hours at 1000-1200 MPa. USE - Method of preparing graphene-reinforced copper base composite material (claimed). DETAILED DESCRIPTION - Preparation of graphene-reinforced copper base composite material comprises: (A) putting copper powder in a plasma enhanced chemical vapor deposition vacuum device, pumping vacuum to pressure to 5 Pa, inletting hydrogen gas, adjusting pumping pressure of plasma enhanced chemical vapor deposition vacuum device to 190-210 Pa, raising temperature of gas from 500 degrees C to 700 degrees C, and depositing copper, annealing and preserving heat for 25-35 minutes; (B) introducing argon and carbon source gas, adjusting plasma enhanced chemical vapor deposition vacuum device pressure to 800-1000 Pa, controlling temperature at 500-700 degrees C, and depositing for 10-300 seconds; (C) stopping inletting carbon source gas, adjusting plasma-enhanced chemical vapor deposition vacuum device pressure to 150-200 Pa, cooling to room temperature to obtain graphene/copper composite powder; and (D) sintering composite powder at 900-1000 degrees C for 2-3 hours at 1000-1200 MPa to obtain graphene-reinforced copper base composite material.