▎ 摘　　要

NOVELTY - The detector has a silicon substrate (1) whose surface is formed with a silicon dioxide isolation layer (2) that is provided with a silicon dioxide window (3). A side surface of the silicon dioxide isolated layer is fixed with two top electrodes (5). The silicon substrate is formed with a silicon dioxide insulation layer (4). An inner side wall of the silicon dioxide isolated layer is formed with an opening. The silicon dioxide insulation layer and a graphite alkene inter-digital electrode thin film (6) are fixed with a surface of an anti-reflection cover (7). USE - Graphene/silicon/graphite avalanche photoelectric detector. ADVANTAGE - The detector has wide range of applications and high response degree, and reduces light detecting difficulties, characteristics energy consumption and switch ratio and increases response speed and gain generating rate. DETAILED DESCRIPTION - The top electrodes are made of metal thin film electrode, metal, aluminum and gold or gold chromium alloy material. The anti-reflection cover is made of transparent thin film, silicon dioxide and aluminum oxide or titanium oxide material. An INDEPENDENT CLAIM is also included for a graphene/silicon/graphite avalanche photoelectric detector manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene/silicon/graphite avalanche photoelectric detector. Silicon substrate (1) Silicon dioxide isolation layer (2) Silicon dioxide window (3) Silicon dioxide insulation layer (4) Top electrodes (5) Graphite alkene inter-digital electrode thin film (6) Anti-reflection cover (7)