• 专利标题:   Preparation of graphene array, by coating boron trioxide on surface of silicon carbide foam, annealing to obtain substrate, pyrolyzing epitaxial graphene on substrate, subjecting to physical gas phase transmission treatment, and peeling off surface of foam with graphene array on surface.
  • 专利号:   CN115159512-A
  • 发明人:   WEI G, LI L, SU Y, ZENG J, DING L
  • 专利权人:   UNIV SHAANXI SCI TECHNOLOGY
  • 国际专利分类:   C01B032/188, C01B032/19
  • 专利详细信息:   CN115159512-A 11 Oct 2022 C01B-032/188 202301 Chinese
  • 申请详细信息:   CN115159512-A CN10810573 11 Jul 2022
  • 优先权号:   CN10810573

▎ 摘  要

NOVELTY - Preparation of graphene array involves: (1) coating boron trioxide on a surface of silicon carbide three-dimensional foam, and heat-treating in an oxygen atmosphere to obtain P-type silicon carbide foam; (2) annealing to obtain a silicon carbide foam substrate; (3) pyrolyzing epitaxial graphene on the substrate to obtain a silicon carbide foam with graphene film on the surface; (4) subjecting to physical gas phase transmission treatment to obtain a silicon carbide foam with graphene array on its surface; and (5) peeling off the surface of the silicon carbide foam with graphene array on the surface. USE - Preparation of graphene array (claimed). ADVANTAGE - The method can overcome the defects of high cost and graphene agglomeration of the single crystal silicon carbide epitaxial graphene, ensures stable performance, and is simple and suitable for large-scale industrial production.