▎ 摘　　要

NOVELTY - Preparation of graphene array involves: (1) coating boron trioxide on a surface of silicon carbide three-dimensional foam, and heat-treating in an oxygen atmosphere to obtain P-type silicon carbide foam; (2) annealing to obtain a silicon carbide foam substrate; (3) pyrolyzing epitaxial graphene on the substrate to obtain a silicon carbide foam with graphene film on the surface; (4) subjecting to physical gas phase transmission treatment to obtain a silicon carbide foam with graphene array on its surface; and (5) peeling off the surface of the silicon carbide foam with graphene array on the surface. USE - Preparation of graphene array (claimed). ADVANTAGE - The method can overcome the defects of high cost and graphene agglomeration of the single crystal silicon carbide epitaxial graphene, ensures stable performance, and is simple and suitable for large-scale industrial production.