▎ 摘　　要

NOVELTY - The method involves forming an insulation medium material on a surface of a substrate. A continuous graphene (50) is formed on the surface of the substrate. The continuous graphene is formed with a metal electrode (40). The continuous graphene is covered with a resist layer. The resist layer is formed as a predetermined mask-shaped structure. Pattern of the mask is formed in a graphene area. A nanometer structure (20) is formed in the graphene area. A rest disconnected graphene (51) is formed in an outer side of the graphene area. USE - Graphene nano-structure electronic device preparation method. ADVANTAGE - The method enables performing graphene nano-structure electronic device preparing process with high processing precision and consistency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene nano-structure electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene nano-structure electronic device. Nanometer structure (20) Metal electrode (40) Continuous graphene (50) Rest disconnected graphene (51)