• 专利标题:   Semiconductor device comprises substrate comprising insulator and semiconductor comprising group IV material and/or group III-V compound, and graphene layer grown on surface of semiconductor.
  • 专利号:   EP3410465-A1, US2018350915-A1, KR2018131926-A, CN108987463-A
  • 发明人:   SHIN K, SHIN H, CHO Y, NAM S, PARK S, LEE Y, SHIN K W, SHIN H J, CHO Y C, NAM S G, PARK S J, LEE Y S
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   H01L021/02, H01L029/16, H01L029/66, C01B032/186, H01L029/167, H01L023/532, H01L021/3065, H01L029/207, H01L029/22
  • 专利详细信息:   EP3410465-A1 05 Dec 2018 H01L-021/02 201901 Pages: 21 English
  • 申请详细信息:   EP3410465-A1 EP204757 30 Nov 2017
  • 优先权号:   KR068664

▎ 摘  要

NOVELTY - A semiconductor device (400,500) comprises a substrate (410,510) comprising an insulator (411,512) and a semiconductor (412,511) comprising group IV material and/or group III-V compound, and a graphene layer (430,531) grown on a surface of the semiconductor. USE - Semiconductor device. ADVANTAGE - The semiconductor device has excellent electroconductivity, mechanical characteristics and chemical stability, due to the presence of graphene. The graphene layer is thin, and can be selectively grown only on a desired region according to a structure of the substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of semiconductor device. DESCRIPTION OF DRAWING(S) - The drawings show cross-sectional views of the semiconductor device. Semiconductor device (400,500) Substrate (410,510) Insulator (411,512) Semiconductor layer (412,511) Graphene Layer (430,531)