▎ 摘　　要

NOVELTY - A semiconductor device (400,500) comprises a substrate (410,510) comprising an insulator (411,512) and a semiconductor (412,511) comprising group IV material and/or group III-V compound, and a graphene layer (430,531) grown on a surface of the semiconductor. USE - Semiconductor device. ADVANTAGE - The semiconductor device has excellent electroconductivity, mechanical characteristics and chemical stability, due to the presence of graphene. The graphene layer is thin, and can be selectively grown only on a desired region according to a structure of the substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of semiconductor device. DESCRIPTION OF DRAWING(S) - The drawings show cross-sectional views of the semiconductor device. Semiconductor device (400,500) Substrate (410,510) Insulator (411,512) Semiconductor layer (412,511) Graphene Layer (430,531)