• 专利标题:   Forming graphene on flexible substrate, involves providing polymer substrate including metal structure, carbon source and carrier gas, and subjecting polymer substrate to plasma enhanced chemical vapor deposition process.
  • 专利号:   US2022115230-A1, TW202223148-A
  • 发明人:   TSENG C, LIN C, YEH N, LEU C, LU C
  • 专利权人:   IND TECHNOLOGY RES INST, CALIFORNIA INST OF TECHNOLOGY, CALIFORNIA INST OF TECHNOLOGY, IND TECHNOLOGY RES INST
  • 国际专利分类:   H01L021/02, H01L029/16, C01B032/186, C23C016/26, C23C016/513, H01L021/205, H01L021/285
  • 专利详细信息:   US2022115230-A1 14 Apr 2022 H01L-021/02 202240 English
  • 申请详细信息:   US2022115230-A1 US500854 13 Oct 2021
  • 优先权号:   US091408P, US213558P, US500854

▎ 摘  要

NOVELTY - Forming graphene on flexible substrate, involves providing polymer substrate including a metal structure, a carbon source and carrier gas. The polymer substrate is subjected to a plasma enhanced chemical vapor deposition (PECVD) process, and a graphene layer is grown on the metal structure. USE - Method for forming graphene on flexible substrate, where the graphene is useful in large-area optoelectronic devices such as touch screen displays and photovoltaic cells and light emitting diodes. ADVANTAGE - The method is capable of efficiently forming the graphene on the flexible substrate with improved electrical, structural, chemical, and mechanical properties.