▎ 摘　　要

NOVELTY - A vertical monomolecular film field effect transistor based on two-dimensional stacked heterostructure comprises two-dimensional material template layer, ultra-flat metal electrode, two-dimensional material insulating support layer, self-assembled monolayers, two-dimensional material drain electrode, insulating two-dimensional material dielectric layer and conductive two-dimensional material gate electrode layer. USE - Vertical monomolecular film field effect transistor. ADVANTAGE - The transistor utilizes the two-dimensional material to replace the gate electrode and dielectric layer material in the traditional field effect transistor, realizes the vertical molecular field effect transistor with the room temperature stability of the solid gate control, and has improved metal electrode flatness by feeding the two-dimensional material thin layer and stability of the device and possibility of large scale integration. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the vertical monomolecular film field effect transistor, which involves assembling a two-dimensional stack, controlling the flatness and thickness of the atom level in the two-dimensional material of each component of the device with an ultra-flat metal electrode, controlling the distance between source and drain electrodes by atomic layer, combining with the cross-plane vertical heterostructure, in which the dielectric layer or gate electrode layer has direct contact with the molecules, and performing chemical self-assembly of monomolecular membranes. The method involves using van der Waals assembly process. The material is in contact with the material by van der Waals force.