▎ 摘　　要

NOVELTY - The LED (10) has a semiconductor epitaxial layer including a first semiconductor layer (120) formed on epitaxial growth surface (101) of sapphire substrate (100), and an active layer (130) formed between the semiconductor layers (120,140). A first electrode (150) is electrically connected with semiconductor layer (140) while a second electrode (160) is electrically connected with semiconductor layer (120). A reflection layer (170) covers the semiconductor layer (140) while a graphene layer (110) having apertures (112), is located between the active layer and semiconductor layer (120). USE - LED used as light source in optical imaging system such as display, projector. ADVANTAGE - Avoids complex etching process since microstructures are formed on the semiconductor epitaxial layer using graphene layer as the mask layer. Improves light extraction efficiency since the apertures in the graphene layer and the microstructures are sufficiently small. Further improves light extraction efficiency since extraction direction of the light will be changed by the grooves of the patterned depression and the graphene layer. Stacking the carbon nanotube films adds to the structural integrity of the carbon nanotube structure. The specific surface area of the twisted carbon nanotube wire will decrease, while the density and strength of the twisted carbon nanotube wire will increase. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the LED. LED (10) Sapphire substrate (100) Epitaxial growth surface (101) Graphene layer (110) Apertures (112) Semiconductor layers (120,140) Active layer (130) First electrode (150) Second electrode (160) Reflection layer (170)