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  • 专利标题:   Preparing graphene film at low temperature, comprises depositing diamond-like carbon film layer on metal substrate, heating under non-oxidizing atmosphere, graphitizing diamond-like carbon film with metal substrate catalyst to form graphene.
  • 专利号:   CN103407988-A
  • 发明人:   WANG L, WU H, YANG L, ZHANG J, CHEN W
  • 专利权人:   UNIV SHANGHAI
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN103407988-A 27 Nov 2013 C01B-031/04 201412 Pages: 7 Chinese
  • 申请详细信息:   CN103407988-A CN10060733 27 Feb 2013
  • 优先权号:   CN10060733

▎ 摘　　要

NOVELTY - Preparing graphene film at low temperature, comprises (a) depositing diamond-like carbon (DLC) thin film layer on a metal substrate, (b) placing the obtained metal substrate coated with DLC film in a non-oxidizing atmosphere, heating at 300-500 degrees C, insulating for 200 minutes, graphitizing the DLC film under high temperature with metal substrate catalyst to form graphene, cooling at room temperature in a non-oxidizing atmosphere to obtain graphene film overlaid on the metal substrate. USE - The method is useful for preparing graphene film at low temperature (claimed). ADVANTAGE - The method utilizes DLC as precursor for growth of graphene.