▎ 摘　　要

NOVELTY - The method involves inkjet-coating a semiconductor material such as organic semiconductor, carbon nanotube, graphene, fullerene on the surface of a substrate. The inkjet coating is carried out while moving an inkjet head to the substrate. The liquid drop number and/or liquid drop interval are changed in accordance with a predetermined condition to manufacture a field effect type transistor (FET). The FET is formed with a gate electrode (3), a source electrode (8) and a drain electrode (9). The liquid drop number and/or liquid drop interval are changed according to a predetermined condition for each portion forming FET on substrate. USE - Method for manufacturing field effect transistor (FET) for semiconductor device. ADVANTAGE - The method enables efficiently manufacturing the FET with desired characteristics and reducing size of the semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a semiconductor device. Gate electrode (3) Source electrode (8) Drain electrode (9) Droplet (12) Channel region (14)