▎ 摘　　要

NOVELTY - Method for preparing a memristor involves (a) preparing a first electrode and a second electrode according to a preset conductive material, (b) setting a dielectric layer on a surface of the first electrode, (c) transferring the second electrode to the surface of a side of the dielectrical layer away from one side of a first-level electrode, so as to obtain a vertical structure memristors, and (d) setting the second-level layer on the surface where the first-layer layer is located. USE - Preparation method of memristor for use in device e.g. artificial neural network synapse, information storage and machine learning. ADVANTAGE - The method is capable of reducing the area of memristor, which is more beneficial for improving integration degree and compatibility. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) Memristor. (2) Device, comprising the memristor. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of a memristor preparation method (Drawing includes non-English language text).